A 100-MESFET planar grid oscillator
نویسندگان
چکیده
منابع مشابه
A 100-MESFET Planar Grid Oscillator
-In this work we present a 100-MESFET oscillator which gives 21 W of CW effective radiated power (ERP) with a 16 dB directivity and a 20% dc to RF conversion effciency at 5 GHz. The oscillator is a planar grid structure periodically loaded with transistors. The grid radiates and the devices combine quasi-optically and lock to each other. The oscillator can also be quasi-optically iqjection-lock...
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A new method for quasi-optically combining the output power of MESFET's is presented in which drain and source leads couple directly to the radiated field. The design consists of a planar grid of devices placed in a Fabry-Perot cavity. Capacitive feedback is provided to the gate. This is in contrast to previous MESFET grid designs where the radiated electric field was coupled to the drain and g...
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In this work we present a Schottky diode grid mixer suitable for mixing or detecting quasi-optical signals. The mixer is a planar bow-tie grid structure periodically loaded with diodes. A simple transmission line model is used to predict the reflection coefficient of the grid to a normally incident plane wave. The grid mixer power handling and dynamic range scales as the number of devices in th...
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A 100-transistor MESFET grid oscillator has been fabricated that generates an effective radiated power of 660W at 9.8GHz and has a directivity of 18.0dB. This corresponds to a total radiated power of 10.3 w , or 103mW per device. This is the largest recorded output power for a grid oscillator. The grid drain-source bias voltage is 7.4V and the total drain current for the grid is 6.0A, resulting...
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ژورنال
عنوان ژورنال: IEEE Transactions on Microwave Theory and Techniques
سال: 1991
ISSN: 0018-9480
DOI: 10.1109/22.102960